The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
May. 14, 2013
Applicant:
Nanyang Technological University, Singapore, SG;
Inventors:
Bee Eng Mary Chan, Singapore, SG;
Zhi Dai, Singapore, SG;
Yu Qian Tina Tan, Singapore, SG;
Liangyu Yan, Singapore, SG;
Assignee:
Nanyang Technological University, Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 31/02 (2006.01); B82Y 10/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
C01B 31/026 (2013.01); B82Y 10/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01B 31/0273 (2013.01); H01L 51/0049 (2013.01); H01L 51/0558 (2013.01);
Abstract
The present invention is directed to a method for enriching specific species of carbon nanotubes, comprising contacting a composition of carbon nanotubes with one or more quinone compounds, reacting the carbon nanotubes with the quinone compounds, and separating the carbon nanotubes reacted with the quinone compounds from the unreacted carbon nanotubes. The present invention is also directed to a field-effect transistor comprising a semiconducting single-walled carbon nanotube enriched using a method described herein.