The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Feb. 26, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Woo-Seok Kim, Suwon-si, KR;

Tae-Ik Kim, Seongnam-si, KR;

Ji-Hyun Kim, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03L 7/06 (2006.01); H03L 7/089 (2006.01); H02M 3/04 (2006.01);
U.S. Cl.
CPC ...
H03L 7/0891 (2013.01); H02M 3/04 (2013.01);
Abstract

Provided are a semiconductor device and a phase-locked loop (PLL) including the same. The semiconductor device including an output node from which an output signal is output, a first transistor which has a drain connected to the output node and is gated by a first signal to increase a voltage level of the output node, a second transistor which has a drain connected to the output node, is gated by a second signal which is a complementary signal of the first signal, and reduces the voltage level of the output node, a pull-up circuit which provides a first compensation current varying according to the voltage level of the output node to a source of the first transistor, and a pull-down circuit which provides a second compensation current varying according to the voltage level of the output node to a source of the second transistor.


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