The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Nov. 11, 2014
Applicant:

Sandisk 3d Llc, Milpitas, CA (US);

Inventors:

Zhida Lan, San Jose, CA (US);

Abhijit Bandyopadhyay, San Jose, CA (US);

Christopher Petti, Mountain View, CA (US);

Li Xiao, San Jose, CA (US);

Girish Nagavarapu, Mountain View, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/16 (2013.01); G11C 13/0069 (2013.01); H01L 27/2481 (2013.01); G11C 13/0004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0011 (2013.01); G11C 2013/0083 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/71 (2013.01); G11C 2213/77 (2013.01); G11C 2213/78 (2013.01); G11C 2213/79 (2013.01);
Abstract

The manufacturing of the non-volatile storage system includes depositing one or more layers of reversible resistance-switching material for a non-volatile storage element. Prior to operation, either during manufacturing or afterwards, a forming operation is performed. In one embodiment, the forming operation includes applying a forming voltage to the one or more layers of reversible resistance-switching material to form a first region that includes a resistor and a second region that can reversibly change resistance at a low current, the resistor is formed in response to the forming condition and is not deposited on the device. In some embodiments, programming the non-volatile storage element includes applying a programming voltage that increases in voltage over time at low current but does not exceed the final forming voltage.


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