The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Jan. 16, 2015
Lg Innotek Co., Ltd., Seoul, KR;
Hyung Jo Park, Seoul, KR;
LG INNOTEK CO., LTD., Seoul, KR;
Abstract
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a reflective layer under the light emitting structure; a first electrode layer on the first conductive semiconductor layer; a metal layer under the reflective layer; and a conductive support member under the metal layer. The reflective layer has a thickness of 650 nm to 1550 nm. A top surface of the first conductive semiconductor layer includes a flat first region adjacent to an edge and a rough second region adjacent to the first region. An edge region of a top portion of the conductive support member has a protrusion, and the edge region of the top portion of the conductive support member is not overlapped with the light emitting structure in a vertical direction.