The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Nov. 24, 2015
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Jong Lam Lee, Kyungbuk, KR;

In-kwon Jeong, Cupertino, CA (US);

Myung Cheol Yoo, Pleasanton, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/44 (2010.01); H01C 7/00 (2006.01); H01L 27/08 (2006.01); H01L 49/02 (2006.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/06 (2010.01); H01L 33/40 (2010.01); H01L 33/62 (2010.01); H01L 33/36 (2010.01);
U.S. Cl.
CPC ...
H01L 33/44 (2013.01); H01C 7/006 (2013.01); H01C 7/008 (2013.01); H01L 27/0802 (2013.01); H01L 28/20 (2013.01); H01L 33/0025 (2013.01); H01L 33/0079 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/36 (2013.01); H01L 33/38 (2013.01); H01L 33/40 (2013.01); H01L 33/62 (2013.01); Y10S 438/958 (2013.01); Y10S 438/977 (2013.01);
Abstract

A vertical structure light-emitting device includes a conductive support, a light-emitting semiconductor structure disposed on the conductive support structure, the semiconductor structure having a first semiconductor surface, a side semiconductor surface and a second semiconductor surface, a first electrode electrically connected to the first-type semiconductor layer, a second electrode electrically connected to the second-type semiconductor layer, wherein the second electrode has a first electrode surface, a side electrode surface and a second electrode surface, wherein the first electrode surface, relative to the second electrode surface, is proximate to the semiconductor structure; and wherein the second electrode surface is opposite to the first electrode surface, and a passivation layer disposed on the side semiconductor surface and the second semiconductor surface.


Find Patent Forward Citations

Loading…