The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Sep. 03, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventors:

Satoshi Mitsugi, Kawasaki Kanagawa, JP;

Hiroshi Katsuno, Kamatsu Ishikawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/14 (2010.01); H01L 33/38 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0008 (2013.01); H01L 33/145 (2013.01); H01L 33/38 (2013.01); H01L 33/62 (2013.01);
Abstract

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, an electrode pad, a first electrode, a second electrode and a layer. The semiconductor layer includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The electrode pad is provided in adjacent to the semiconductor layer. The first electrode is connected to the electrode pad with one end, extends from the electrode pad, and is connected to the first semiconductor layer. The second electrode is connected to the second semiconductor layer. The layer with lower conductivity is provided between part of the first semiconductor layer and part of the first electrode. The first electrode has an electrode width. The electrode width is in a direction perpendicular to a direction in which the first electrode extends. The electrode width decreases with distance from the electrode pad.


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