The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Dec. 06, 2013
Applicant:

Solar Frontier K.k., Tokyo, JP;

Inventor:

Akihiko Asano, Tokyo, JP;

Assignee:

Solar Frontier K.K., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/0392 (2006.01); C23C 28/00 (2006.01); H01L 31/06 (2012.01); H01L 31/0445 (2014.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03923 (2013.01); C23C 28/322 (2013.01); C23C 28/34 (2013.01); C23C 28/345 (2013.01); H01L 31/03928 (2013.01); H01L 31/0445 (2014.12); H01L 31/06 (2013.01); H01L 31/18 (2013.01); Y02E 10/541 (2013.01); Y02P 70/521 (2015.11);
Abstract

The method of manufacturing a compound thin-film photovoltaic cell includes preparing a metal substrate, whose main constituent is iron, containing aluminium (Al) and chromium (Cr), and forming an insulating layer on an element forming surface of the metal substrate by baking an insulating material; depositing first electrode layer on the insulating layer; depositing a compound light absorption layer on the first electrode layer; and depositing a second electrode layer on the compound light absorption layer, wherein in the forming the insulating layer, an alumina layer is formed at least on a back surface of the metal substrate by thermal oxidation while baking the insulating material.


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