The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Jul. 19, 2015
Inotera Memories, Inc., Taoyuan, TW;
Tieh-Chiang Wu, Taoyuan, TW;
INOTERA MEMORIES, INC., Taoyuan, TW;
Abstract
The present disclosure provides a semiconductor device including a substrate, a gate structure, a channel layer, a first active region and a second active region. The gate structure is disposed in the substrate. The channel layer is sandwiched between the gate structure and the substrate. A material of the channel layer is selected from the group consisting of silicon-germanium epitaxial material, silicon-carbon epitaxial material, and a combination thereof. The first active region and the second active region are disposed in the substrate and respectively disposed at opposite sides of the gate structure. A method for manufacturing a semiconductor device is provided herein.