The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Sep. 24, 2014
Applicant:
Fitipower Integrated Technology, Inc., Hsinchu, TW;
Inventor:
Chih-Nan Cheng, Hsinchu, TW;
Assignee:
Fitipower Integrated Technology, Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01); H01L 29/747 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7302 (2013.01); H01L 29/747 (2013.01);
Abstract
A triode includes a semiconductor, a deep n-well, a p-well, an n+ doping region, and a p+ doping region. The deep n-well is disposed adjacent to the semiconductor substrate. The p-well is included in the deep n-well and serves as a collector region of the triode. The n+ doping region serves as a base region of the triode. The p+ doping region serves as an emitter region of the triode. The deep n-well is coupled to the n+ doping region.