The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Dec. 10, 2015
SK Hynix Inc., Gyeonggi-do, KR;
Tae-Kyung Oh, Gyeonggi-do, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
A transistor includes a substrate having an active region defined by an isolation layer; a first trench defined in the active region and a second trench defined in the isolation layer; a fin region formed under the first trench; and a buried gate electrode covering sidewalls of the fin region and filling the first and second trenches. The buried gate electrode includes a first work function layer formed on the sidewalls of the fin region; a second work function layer formed on sidewalls of the first trench and the second trench; a third work function layer positioned over the fin region and contacting the second work function layer; and a low resistance layer contacting the third work function layer and partially filling the first and second trenches.