The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Feb. 23, 2015
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Sadayoshi Horii, Toyama, JP;

Arito Ogawa, Toyama, JP;

Hideharu Itatani, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 49/02 (2006.01); H01L 29/51 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); H01L 21/28088 (2013.01); H01L 21/28194 (2013.01); H01L 28/60 (2013.01); H01L 28/75 (2013.01); H01L 29/517 (2013.01); H01L 21/7687 (2013.01); H01L 23/5223 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Provided is a semiconductor device including a metal film which can be formed with lower costs but still mange to have a necessary work function and oxidation resistance. The semiconductor device includes: an insulating film disposed on a substrate; and a metal film disposed on the insulating film to directly contact the insulating film, the metal film including a laminated structure where a first metal film and a second metal film are alternately and repeatedly laminated, wherein the second metal film has a work function different from that of the first metal film and is different from the first metal film in material, and an oxidation resistance of the first metal film is greater than that of the second metal film.


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