The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Feb. 04, 2014
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Inventors:
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 29/40 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 21/28 (2006.01); H01L 29/417 (2006.01); H01L 29/12 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4941 (2013.01); H01L 21/28 (2013.01); H01L 29/12 (2013.01); H01L 29/1608 (2013.01); H01L 29/401 (2013.01); H01L 29/417 (2013.01); H01L 29/45 (2013.01); H01L 29/495 (2013.01); H01L 29/4966 (2013.01); H01L 29/66068 (2013.01); H01L 29/78 (2013.01); H01L 29/7802 (2013.01);
Abstract
A silicon carbide semiconductor device includes a silicon carbide substrate, a main electrode, a first barrier layer, and an interconnection layer. The main electrode is directly provided on the silicon carbide substrate. The first barrier layer is provided on the main electrode, and is made of a conductive material containing no aluminum. The interconnection layer is provided on the first barrier layer, is separated from the main electrode by the first barrier layer, and is made of a material containing aluminum.