The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Oct. 17, 2013
Brolis Semiconductors Ltd., Vilnius, LT;
Kristijonas Vizbaras, Vilnius, LT;
Augustinas Vizbaras, Vilnius, LT;
Brolis Semiconductors Ltd., Vilnius, LT;
Abstract
A III-V compound semiconductor heterostructure grown on a substrate is described. The heterostructure includes a first semiconductor layer, wherein the first layer semiconductor layer is a compound semiconductor layer with (III) (V), wherein (III) represents one or more group-III elements and (V) represents one or more group-V elements, an intermediate layer on the first semiconductor layer, wherein the intermediate layer is a compound semiconductor layer with (III)(V), and wherein the intermediate layer has a thickness of 10 monolayers or below, and a second semiconductor layer, wherein the first layer semiconductor layer is a compound semiconductor layer with (III)(V)