The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Jan. 23, 2015
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Hyeon-Woo Jang, Suwon-si, KR;
Samsung Electronics Co. Ltd., Gyeonggi-do, KR;
Abstract
Provided is a semiconductor device. The semiconductor device includes an isolation region disposed in a semiconductor substrate and configured to define an active region. A gate electrode buried in the active region is disposed. A gate dielectric layer is disposed between the active region and the gate electrode. A first source/drain region and a second source/drain region are disposed in the active region on both sides of the gate electrodes. An interconnection structure intersecting with the gate electrode, overlapping the first and second source/drain regions, electrically connected with the first source/drain region, and spaced apart from the second source/drain region is disposed. A contact structure is disposed on the second source/drain region.