The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Mar. 26, 2014
Applicant:

Magnachip Semiconductor, Ltd., Cheongju-si, KR;

Inventors:

Moon Soo Cho, Seoul, KR;

Chang Yong Choi, Seoul, KR;

Soon Tak Kwon, Seongnam-si, KR;

Kwang Yeon Jun, Bucheon-si, KR;

Dae Byung Kim, Cheongju-si, KR;

Hyuk Woo, Incheon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 29/404 (2013.01); H01L 29/7802 (2013.01); H01L 29/7811 (2013.01); H01L 29/7816 (2013.01); H01L 29/0638 (2013.01);
Abstract

There is provided a super junction semiconductor device. The super junction semiconductor device includes a cell area and a junction termination area disposed on a substrate, and a transition area disposed between the cell area and the junction termination area, and the cell area, the junction termination area, and the transition area each include one or more unit cells comprising a N-type pillar region and a P-type pillar region among a plurality of N-type pillar regions and a P-type pillar regions that are alternated between the cell area and the junction termination area.


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