The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Jul. 13, 2015
Applicant:

Fujitsu Semiconductor Limited, Yokohama-shi, Kanagawa, JP;

Inventors:

Hitoshi Saito, Hachioji, JP;

Wensheng Wang, Kuwana, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 49/02 (2006.01); H01L 27/06 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 28/75 (2013.01); H01L 27/0629 (2013.01); H01L 27/11507 (2013.01); H01L 27/11509 (2013.01); H01L 28/87 (2013.01);
Abstract

A semiconductor device includes: a semiconductor substrate; a base above the semiconductor substrate; a first conductive plug in the base; a memory cell region in the base; and a logic circuit region connected to the memory cell region, the logic circuit including a first capacitor. The first capacitor includes: a first bottom electrode, a part of a lower surface of the first bottom electrode being in contact with the first conductive plug; a first insulating film on the first bottom electrode; and a first top electrode on the first insulating film. The first top electrode is spaced apart from the first conductive plug in planar view.


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