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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9472609 B1

PDFFull Text
Expired
Date of Patent:
Oct. 18, 2016

Filed:

Aug. 25, 2015

Methods of manufacturing polyresistors with selected tcr

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Satyasuresh V. Choppalli, Bangalore, IN;

Prabhu R. Dattatreya, Bangalore, IN;

Josef S. Watts, South Burlington, VT (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Steven Meyers

Hoffman Warnick LLC

Primary Examiner:

Jack Chiang

Assistant Examiner:

Brandon Bowers

Int. Cl.
CPC ...
G06F 17/50 (2006.01); H01L 49/02 (2006.01); H01L 21/66 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 22/14 (2013.01); H01L 22/20 (2013.01);
Abstract

Various embodiments provide computer program products and computer implemented methods. In some embodiments, aspects provide for a method of manufacturing a polysilicon resistor with a selected temperature coefficient of resistance (TCR), the method including selecting a sheet resistance for the polysilicon resistor, the selected sheet resistance being related to a selected film thickness of the polysilicon resistor, selecting a dose level for a grain size modulating species (GSMS) for modulating an average grain size of grains of the polysilicon resistor, selecting a thermal coefficient of resistance (TCR) for the polysilicon resistor, the TCR being related to a selected average grain size of the polysilicon and forming the polysilicon resistor on a substrate, the polysilicon resistor having the selected sheet resistance, the selected GSMS dose level and the selected TCR.

Find Patent Forward Citations

Choppalli, Satyasuresh. (2016). Methods of manufacturing polyresistors with selected tcr (U.S. Patent No. 9472609). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9472609

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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