The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Jan. 26, 2015
Takaaki Negoro, Osaka, JP;
Yoshihiko Miki, Osaka, JP;
Katsuyuki Sakurano, Hyogo, JP;
Keiji Tsuda, Hyogo, JP;
Hirofumi Watanabe, Hyogo, JP;
Takaaki Negoro, Osaka, JP;
Yoshihiko Miki, Osaka, JP;
Katsuyuki Sakurano, Hyogo, JP;
Keiji Tsuda, Hyogo, JP;
Hirofumi Watanabe, Hyogo, JP;
RICOH COMPANY, LTD., Tokyo, JP;
Abstract
A phototransistor includes a first emitter region, a first base region having at least a portion exposed to a light-receiving side, and a first collector region in this order from the light-receiving side in a depth direction. The first collector region includes a second collector region and a third collector region that is in contact with a downstream side of the second collector region in the depth direction and has a resistance lower than that of the second collector region. The phototransistor further includes a first region that is spaced away from the first base region at an outer side of the first base region on a light-receiving side surface thereof, the first region having a conductivity type opposite to that of the first collector region.