The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Feb. 18, 2014
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Alan B. Botula, Essex Junction, VT (US);
Randy L. Wolf, Essex Junction, VT (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/06 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01); H01L 21/84 (2006.01); H01L 23/528 (2006.01); H01L 27/07 (2006.01); H01L 29/861 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 21/768 (2013.01); H01L 21/84 (2013.01); H01L 23/528 (2013.01); H01L 27/0629 (2013.01); H01L 27/0727 (2013.01); H01L 29/66568 (2013.01); H01L 29/42372 (2013.01); H01L 29/66136 (2013.01); H01L 29/861 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Approaches for body contacted transistors are provided. A method of manufacturing a semiconductor structure includes forming a field effect transistor (FET) including a channel and a gate. The method also includes forming a diode that is electrically connected between the channel and the gate, wherein the diode and channel are contained in a same layer of material.