The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Jul. 31, 2015
Applicant:

Ps4 Luxco S.a.r.l., Luxembourg, LU;

Inventor:

Kazutaka Manabe, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/94 (2006.01); H01L 29/66 (2006.01); H01L 49/02 (2006.01); H01L 29/423 (2006.01); H01L 21/74 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10823 (2013.01); H01L 21/743 (2013.01); H01L 27/1085 (2013.01); H01L 27/10805 (2013.01); H01L 27/10808 (2013.01); H01L 27/10814 (2013.01); H01L 27/10847 (2013.01); H01L 27/10876 (2013.01); H01L 27/10888 (2013.01); H01L 28/60 (2013.01); H01L 28/87 (2013.01); H01L 28/91 (2013.01); H01L 29/4236 (2013.01); H01L 29/66181 (2013.01); H01L 29/94 (2013.01); H01L 29/945 (2013.01);
Abstract

A device includes a semiconductor region surrounded with the isolation region and includes a first active region, a channel region and a second active region arranged in that order in a first direction. A first side portion of the first active region and a second side portion of the second active region faces each other across a top surface of the channel region in the first direction. A gate electrode covers the top surface and the first and second side portions and extends in a second direction that intersects the first direction. A first diffusion layer is formed in the first active region. A second diffusion layer is formed in the second active region. An embedded contact plug is formed in the first active region and extends downwardly from the upper surface of the semiconductor region and contacts with the first diffusion layer.


Find Patent Forward Citations

Loading…