The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Mar. 24, 2014
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 21/82 (2006.01); H01L 21/8252 (2006.01); H01L 27/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0251 (2013.01); H01L 21/8213 (2013.01); H01L 21/8252 (2013.01); H01L 27/0605 (2013.01); H01L 27/088 (2013.01); H01L 29/66068 (2013.01); H01L 29/66712 (2013.01); H01L 29/7803 (2013.01); H01L 29/7811 (2013.01); H01L 29/7815 (2013.01); H01L 29/0619 (2013.01); H01L 29/0696 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/402 (2013.01);
Abstract
The present invention includes a second source layer formed on a surface layer of a p base layer in the same step as that of forming a nsource layer to sandwich a field insulating film, a second gate electrode being the same layer as a gate polysilicon and formed at least on the field insulating film, a third gate electrode formed on one of portions of the second source layer to be electrically connected to the second gate electrode, and a second source electrode formed on the other portion of the second source layer.