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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9472543 B1

PDFFull Text
Date of Patent:
Oct. 18, 2016

Filed:

Mar. 24, 2014

Wide band gap semiconductor device

Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Eisuke Suekawa, Tokyo, JP;

Naoto Kaguchi, Tokyo, JP;

Masaaki Ikegami, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorney:

Studebaker & Brackett PC

Primary Examiner:

William F Kraig

Assistant Examiner:

Sun M Kim

Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 21/82 (2006.01); H01L 21/8252 (2006.01); H01L 27/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0251 (2013.01); H01L 21/8213 (2013.01); H01L 21/8252 (2013.01); H01L 27/0605 (2013.01); H01L 27/088 (2013.01); H01L 29/66068 (2013.01); H01L 29/66712 (2013.01); H01L 29/7803 (2013.01); H01L 29/7811 (2013.01); H01L 29/7815 (2013.01); H01L 29/0619 (2013.01); H01L 29/0696 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/402 (2013.01);
Abstract

The present invention includes a second source layer formed on a surface layer of a p base layer in the same step as that of forming a nsource layer to sandwich a field insulating film, a second gate electrode being the same layer as a gate polysilicon and formed at least on the field insulating film, a third gate electrode formed on one of portions of the second source layer to be electrically connected to the second gate electrode, and a second source electrode formed on the other portion of the second source layer.

Find Patent Forward Citations

Suekawa, Eisuke. (2016). Wide band gap semiconductor device (U.S. Patent No. 9472543). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9472543

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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