The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

May. 19, 2015
Applicant:

Valley Device Management, Wilmington, DE (US);

Inventors:

Masanori Onodera, Tokyo, JP;

Kouichi Meguro, Tokyo, JP;

Junji Tanaka, Tokyo, JP;

Assignee:

VALLEY DEVICE MANAGEMENT, Wilmington, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/28 (2006.01); H01L 25/00 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 25/065 (2006.01); G06F 1/18 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/66 (2006.01); H01L 25/18 (2006.01);
U.S. Cl.
CPC ...
H01L 25/50 (2013.01); G06F 1/183 (2013.01); H01L 21/56 (2013.01); H01L 21/563 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 24/11 (2013.01); H01L 24/85 (2013.01); H01L 25/0657 (2013.01); H01L 23/3128 (2013.01); H01L 23/3135 (2013.01); H01L 23/66 (2013.01); H01L 24/73 (2013.01); H01L 25/18 (2013.01); H01L 2221/68331 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48145 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/48471 (2013.01); H01L 2224/48479 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/85051 (2013.01); H01L 2224/85986 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/0652 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/14 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15331 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19107 (2013.01);
Abstract

Various embodiments of the present invention include a method for making a semiconductor device the method including disposing a first semiconductor chip on a first surface of a first substrate, the first substrate comprising a second surface opposing the first surface, depositing a first resin above the first semiconductor chip, disposing a built-in semiconductor device on the first resin. The built-in semiconductor device including a second substrate, a second semiconductor chip disposed on the second substrate, and a second resin that seals the second semiconductor chip. The method including depositing a third resin above the built-in semiconductor device and the first resin and covering a side surface of the first substrate and not extending beyond the second surface of the first substrate. According to an aspect of the present invention, it is possible to provide a high-quality semiconductor device fabrication method, in which downsizing and cost reduction can be realized.


Find Patent Forward Citations

Loading…