The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Jan. 15, 2014
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Yukio Maki, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
Possible to form an opening having a sufficient opening diameter in a region sandwiched between a pair of bit lines and thereby provide a semiconductor device in which a high-quality contact using the opening is formed. The semiconductor device includes a first conductive layer, a first interlayer insulating film, a bit line, a first insulating film, a second interlayer insulating film, and a second conductive layer. The first insulating film that covers a side surface of the bit line has a portion perpendicular to a main surface of a semiconductor substrate in a region lower than a position lower than an uppermost portion of the first insulating film by a thickness, in a direction along the main surface of the semiconductor substrate, of the first insulating film that covers the side surface of the bit line at a lowermost portion of the bit line.