The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
May. 28, 2014
Applicant:
Cree, Inc., Durham, NC (US);
Inventors:
Simon Wood, Raleigh, NC (US);
Chris Hermanson, Durham, NC (US);
Assignee:
Cree, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0256 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 29/20 (2006.01); H01L 29/78 (2006.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/293 (2013.01); H01L 23/3107 (2013.01); H01L 23/49503 (2013.01); H01L 23/49568 (2013.01); H01L 29/2003 (2013.01); H01L 29/78 (2013.01); H01L 23/49555 (2013.01); H01L 23/49562 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2223/6655 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13064 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/1421 (2013.01); H01L 2924/181 (2013.01); H01L 2924/1815 (2013.01);
Abstract
A transistor package includes a lead frame and a gallium nitride (GaN) transistor attached to the lead frame. The lead frame and the GaN transistor are surrounded by an over-mold with a glass transition temperature greater than about 135° C. and a flexural modulus less than about 20 GPa. Using an over-mold with a glass transition temperature greater than about 135° C. and a flexural modulus less than about 20 GPa allows the over-mold to handle the heat produced by the GaN transistor while preventing damage to the GaN transistor due to thermal expansion and/or contraction of the over-mold.