The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Mar. 03, 2015
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventor:
Shingo Masuko, Kanazawa Ishikawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/8252 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/768 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8252 (2013.01); H01L 21/304 (2013.01); H01L 21/3065 (2013.01); H01L 21/30612 (2013.01); H01L 21/30625 (2013.01); H01L 21/768 (2013.01); H01L 29/7783 (2013.01); H01L 29/2003 (2013.01);
Abstract
A method of forming a semiconductor device including a semiconductor substrate having a first surface and a second surface, and having a gallium nitride-containing layer provided on the first surface of the semiconductor substrate includes grinding, polishing, and etching the second surface of the semiconductor substrate of which a thickness is d1, and reducing the thickness of the semiconductor substrate to one-fifth or less of d1.