The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Aug. 29, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Sang-Il Han, Seoul, KR;

Jong-Un Kim, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/762 (2013.01); H01L 21/76224 (2013.01); H01L 21/76232 (2013.01); H01L 21/76283 (2013.01); H01L 21/76829 (2013.01); H01L 21/76832 (2013.01); H01L 21/823481 (2013.01); H01L 27/10823 (2013.01); H01L 29/0649 (2013.01); H01L 27/10876 (2013.01);
Abstract

A semiconductor memory device including a substrate, a first element isolation film pattern, and a second element isolation film pattern. The substrate includes a first region and a second region. The first element isolation film pattern is in the first region and corresponds to a first active region. The second element isolation film pattern is in the second region and corresponds to a second active region. The first element isolation film pattern includes a first material and the second element isolation film pattern includes a second material different from the first material.


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