The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Oct. 12, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Emre Alptekin, Wappingers Falls, NY (US);

Nicolas L. Breil, Wappingers Falls, NY (US);

Christian Lavoie, Pleasantville, NY (US);

Ahmet S. Ozcan, Pleasantville, NY (US);

Kathryn T. Schonenberg, Wappingers Falls, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01); H01L 21/285 (2006.01); H01L 29/66 (2006.01); H01L 23/485 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28026 (2013.01); H01L 21/28512 (2013.01); H01L 21/28518 (2013.01); H01L 21/28568 (2013.01); H01L 21/76843 (2013.01); H01L 21/76858 (2013.01); H01L 23/485 (2013.01); H01L 23/53238 (2013.01); H01L 29/456 (2013.01); H01L 29/66545 (2013.01); H01L 29/78 (2013.01); H01L 21/76855 (2013.01);
Abstract

Contact openings are formed into a dielectric material exposing a surface portion of a semiconductor substrate. A first transition metal liner including at least one first transition metal element, a second transition metal liner including at least one second transition metal element that is different from the at least one first transition metal element and a metal contact are sequentially formed within each contact opening. Following a planarization process, the structure is annealed forming metal semiconductor alloy contacts at the bottom of each contact opening. Each metal semiconductor alloy contact that is formed includes the at least one first transition metal element, the at least one second transition metal element and a semiconductor element.


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