The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Nov. 15, 2010
Applicants:
Rossano Carta, Turin, IT;
Laura Bellemo, Turin, IT;
Giovanni Richieri, Turin, IT;
Luigi Merlin, Turin, IT;
Inventors:
Rossano Carta, Turin, IT;
Laura Bellemo, Turin, IT;
Giovanni Richieri, Turin, IT;
Luigi Merlin, Turin, IT;
Assignee:
SILICONIX TECHNOLOGY C.V., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/04 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/808 (2006.01);
U.S. Cl.
CPC ...
H01L 21/047 (2013.01); H01L 29/0657 (2013.01); H01L 29/1066 (2013.01); H01L 29/66068 (2013.01); H01L 29/8083 (2013.01);
Abstract
A SiC JFET that includes a plurality of trenches formed in a SiC semiconductor body of one conductivity each trench having a region of another conductivity formed in the bottom and sidewalls thereof.