The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Apr. 15, 2015
Applicant:
University of Central Florida Research Foundation, Inc., Orlando, FL (US);
Inventors:
Saiful Khondaker, Oviedo, FL (US);
Muhammad Islam, Orlando, FL (US);
Laurene Tetard, Orlando, FL (US);
Assignee:
University of Central Florida Research Foundation, Inc., Orlando, FL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 29/778 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02271 (2013.01); H01L 21/0234 (2013.01); H01L 21/02175 (2013.01); H01L 29/24 (2013.01); H01L 29/778 (2013.01);
Abstract
A plasma-based processing method includes depositing a transition metal dichalcogenide (TMDC) material onto a substrate. The TMDC material is plasma treated in an oxygen containing ambient to oxidize the TMDC material to form oxidized dielectric TMDC material. The oxidized dielectric TMDC material has a higher electrical resistivity as compared an electrical resistivity of the TMDC material before the plasma treating, typically >10times greater.