The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Nov. 06, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Min-Yeab Choo, Suwon-si, KR;

Bu-Il Jung, Hwaseong-si, KR;

Do-Geun Kim, Seoul, KR;

Mi-Kyoung Park, Seoul, KR;

Dong-Yang Lee, Yongin-si, KR;

Sun-Young Lim, Hwaseong-si, KR;

Ju-Yun Jung, Hwaseong-si, KR;

Hyuk Han, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 29/04 (2006.01); G11C 29/00 (2006.01);
U.S. Cl.
CPC ...
G11C 29/04 (2013.01); G11C 29/78 (2013.01); G11C 29/785 (2013.01); G11C 29/88 (2013.01);
Abstract

A method of repairing a memory device including a boot memory region, a normal memory region, and a redundant memory region, the redundant memory region including a plurality of repair memory units, includes repairing the boot memory region by performing at least one of excluding first fault memory units of the boot memory region from use as storage and replacing the first fault memory units with boot repair memory units of the repair memory units, each of the first fault memory units having at least one fault memory cell; and after the repairing the boot memory region, repairing the normal memory region by performing at least one of excluding second fault memory units from use as storage and replacing the second fault memory units with normal repair memory units of the repair memory units.


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