The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Jan. 20, 2016
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Hideaki Yamakoshi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/10 (2006.01); H01L 27/115 (2006.01); G11C 16/26 (2006.01); G11C 16/14 (2006.01); H01L 27/02 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); H01L 27/0207 (2013.01); H01L 27/11524 (2013.01); H01L 27/11526 (2013.01); H01L 29/7883 (2013.01);
Abstract

In order to reduce a chip area of a semiconductor device having a non-volatile memory, a configuration is adopted, in which a length in a second direction of a capacity electrode of an element for writing/erasing data is made smaller than both a length in the second direction of a gate electrode of an element for reading data formed by part of the same floating electrode and a length in the second direction of a capacity electrode of a capacitive element. Herein, by recessing, of the side surfaces of the capacity electrode of the element for writing/erasing data, the side surface on the side opposite to the capacity electrode of the other element for writing/erasing data adjacent to the former element for writing/erasing data, a length in the second direction of an active region where the element for writing/erasing data is arranged is reduced.


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