The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Feb. 19, 2014
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventor:

Tetsuji Kunitake, Mie-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 5/02 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 5/025 (2013.01); G11C 13/0002 (2013.01); G11C 13/0023 (2013.01); G11C 2211/5641 (2013.01); G11C 2213/77 (2013.01);
Abstract

According to one embodiment, a non-volatile memory device includes: first memory cell regions including first wirings extending in a first direction, second wirings extending in a second direction crossing the first direction, and first memory cells provided between the first wirings and the second wirings and being capable of changing resistance state; and second memory cell regions including third wirings extending in the first direction, fourth wirings extending in the second direction crossing the first direction, and second memory cells provided between the third wirings and the fourth wirings and being capable of changing resistance state, the second memory cell region having a smaller area than the first memory cell region in top view.


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