The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Oct. 17, 2014
Applicant:
Fujitsu Semiconductor Limited, Yokohama-shi, Kanagawa, JP;
Inventors:
Tomiyasu Saito, Kuwana, JP;
Tatsuya Mise, Aizuwakamatsu, JP;
Yoshio Matsuzawa, Aizuwakamatsu, JP;
Tetsuya Takeuchi, Aizuwakamatsu, JP;
Assignee:
FUJITSU SEMICONDUCTOR LIMITED, Yokohama, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/02 (2006.01); G02F 1/1333 (2006.01); G02F 1/1343 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
G02F 1/13439 (2013.01); G02F 1/136277 (2013.01);
Abstract
A semiconductor device includes a first electrode layer and a second electrode layer disposed over a substrate, a first insulating layer disposed over the first electrode layer, and a reflective electrode layer disposed on the first insulating layer and electrically connected to the first electrode layer, wherein the second electrode layer is exposed externally, and a thickness of the second electrode layer is greater than a thickness of the reflective electrode layer.