The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

May. 28, 2015
Applicant:

National Chung Cheng University, Chia-Yi County, TW;

Inventors:

Shau-Chun Wang, Chia-Yi County, TW;

Hui-Yu Tseng, Taichung, TW;

Chai-Ling Kao, Kaohsiung, TW;

Assignee:

National Chung Cheng University, Chai-Yi County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01); G01N 21/47 (2006.01); G01N 21/49 (2006.01);
U.S. Cl.
CPC ...
G01N 21/4785 (2013.01); G01N 21/49 (2013.01);
Abstract

A method of examining the purity of dendrimers is revealed. It comprises steps of measuring a light scattering intensity of a set of pure standards having a specific molecular weight with a static laser light scattering detector by use of flow injection polymer analysis; establishing a scaling relation by doing a regression of a ratio of the light scattering intensity per concentration (I/c) against molecular weight (M.W.); measuring the light scattering intensity of a dendrimer to be tested having the same unit and surface-modified functional group as the set of pure standards, and examining the purity of the dendrimer to be tested according to the scaling relation.


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