The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Aug. 10, 2012
Jin-woo Ahn, Daejeon, KR;
Bong-woo Kim, Gyeongbuk, KR;
Ii-soo Choi, Gyeongbuk, KR;
Do-yeon Kim, Daegu, KR;
Jin-Woo Ahn, Daejeon, KR;
Bong-Woo Kim, Gyeongbuk, KR;
II-Soo Choi, Gyeongbuk, KR;
Do-Yeon Kim, Daegu, KR;
LG SILTRON INC., Gyeongsangbuk-do, KR;
Abstract
Provided is an ingot growing apparatus, which includes a crucible containing a silicon melt, a pulling device pulling a silicon single crystal ingot grown from the silicon melt, and a dopant supply unit disposed adjacent to the pulling device and for supplying a dopant during growing of the ingot. The neck portion may be doped at a concentration higher than that of the ingot through the dopant supply unit. Therefore, dislocation propagation velocity may be decreased and a propagation length may be shortened.