The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Jun. 14, 2012
Applicants:

Alessandro Antonaia, Portici, IT;

Salvatore Esposito, Naples, IT;

Maria Luisa Addonizio, Portici, IT;

Antonio Guglielmo, Sapri, IT;

Inventors:

Alessandro Antonaia, Portici, IT;

Salvatore Esposito, Naples, IT;

Maria Luisa Addonizio, Portici, IT;

Antonio Guglielmo, Sapri, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/06 (2006.01); C23C 14/00 (2006.01); C23C 14/34 (2006.01); F24J 2/48 (2006.01); C04B 35/581 (2006.01); C04B 35/584 (2006.01); F24J 2/46 (2006.01); C23C 14/14 (2006.01); G02B 1/10 (2015.01); G02B 5/08 (2006.01);
U.S. Cl.
CPC ...
C23C 14/0617 (2013.01); C04B 35/581 (2013.01); C04B 35/584 (2013.01); C23C 14/0042 (2013.01); C23C 14/0641 (2013.01); C23C 14/0652 (2013.01); C23C 14/14 (2013.01); C23C 14/34 (2013.01); C23C 14/3464 (2013.01); F24J 2/4652 (2013.01); F24J 2/485 (2013.01); G02B 1/10 (2013.01); G02B 5/085 (2013.01); C04B 2235/3886 (2013.01); C04B 2235/75 (2013.01); C04B 2235/79 (2013.01); C04B 2235/80 (2013.01); Y02E 10/40 (2013.01);
Abstract

A thin-film spectrally selective coating for receiver tube of vacuumed type for use in thermodynamic solar installations and operating both at medium temperature (up to 400° C.) and at high temperature (up to 550° C.), coating where the optically absorbing layer is a multilayer of cermet material of type: WN—AlNor MoN—AlN, material prepared with reactive co-sputtering technique from an Al target and a W or Mo target, process conducted under a transition regimen, under PFM (Plasma Emission Monitoring) or CVM (Cathode Voltage Monitoring) monitoring for the sole Al target, with inletting near the Al target of a Namount adequate for obtainment of a high-transparency, high growth rate sub-stoichiometric ceramic AlN and with inletting near the W or Mo target of a Namount adequate for obtainment of the sole WN or MoN phase, phase very stable at high temperature, such as to make the cermet material as close as possible to the formulation WN—AlNor MoN—AlN(with x comprised between 0.90 and 1.00, preferably 0.95) and, therefore, cermet material employable at least up to the temperature of 550° C.


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