The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Sep. 26, 2012
Applicant:
Hanwha Chemical Corporation, Seoul, KR;
Inventors:
Hyun-Cheol Ryu, Daejeon, KR;
Jea Sung Park, Daejeon, KR;
Dong-Ho Lee, Daejeon, KR;
Eun-Jeong Kim, Daejeon, KR;
Gui Ryong Ahn, Daejeon, KR;
Sung Eun Park, Seoul, KR;
Assignee:
HANWHA CHEMICAL CORPORATION, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/035 (2006.01); B01J 19/24 (2006.01);
U.S. Cl.
CPC ...
C01B 33/035 (2013.01); B01J 19/24 (2013.01); B01J 2219/002 (2013.01); B01J 2219/00135 (2013.01); B01J 2219/00186 (2013.01); B01J 2219/00231 (2013.01);
Abstract
The present invention relates to a method for manufacturing polysilicon. According to the present invention, meltdown can be prevented during the growth of silicon rod, and a polycrystalline silicon rod having a larger diameter can be shortly manufactured with a minimal consumption of energy.