The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Feb. 27, 2015
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Akio Ui, Tokyo, JP;

Yosuke Sato, Kanagawa, JP;

Masato Akita, Kanagawa, JP;

Yasushi Sanada, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
A61L 9/16 (2006.01); A61L 9/22 (2006.01); B01D 53/32 (2006.01); B01D 53/86 (2006.01);
U.S. Cl.
CPC ...
A61L 9/16 (2013.01); A61L 9/22 (2013.01); B01D 53/323 (2013.01); B01D 53/869 (2013.01); B01D 53/8631 (2013.01); A61L 2209/212 (2013.01); B01D 2251/104 (2013.01); B01D 2255/802 (2013.01); B01D 2257/406 (2013.01); B01D 2257/702 (2013.01); B01D 2257/708 (2013.01); B01D 2257/90 (2013.01);
Abstract

A gas processing apparatus of an embodiment includes: first and second dielectric substrates facing with each other; first and second discharge electrodes respectively disposed on a pair of facing principal surfaces of the dielectric substrates; first and second ground electrodes respectively disposed on a pair of principle surfaces at opposite sides of the principle surfaces of the dielectric substrates; a gas flow path to supply gas to be processed between the discharge electrodes; an AC power source to generate first and second plasma-induced flows by applying an AC voltage between the discharge electrodes and the ground electrodes; and a region disposed between the dielectric substrates at downstream of the plasma-induced flows from the discharge electrodes, and a gap between the dielectric substrates being 1.3 times or less of a sum of thicknesses of the plasma-induced flows.


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