The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2016

Filed:

Jun. 24, 2015
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Fumito Suzuki, Osaka, JP;

Takehiro Ishida, Fukushima, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 37/00 (2006.01); H05K 3/46 (2006.01);
U.S. Cl.
CPC ...
H05K 3/4673 (2013.01); H05K 2203/066 (2013.01);
Abstract

A core material is prepared, wherein the core material has an insulating layer, and a conductor pattern provided on a surface of the insulating layer. One or more prepreg materials are prepared. Each prepreg material includes a glass cloth, and first and second resin layers which are formed from a semi-cured resin with which the glass cloth is impregnated, and cover the opposite surfaces of the glass cloth, respectively. A laminated body is formed by placing the one or more prepreg materials on one another, such that one prepreg material out of the one or more prepreg materials is provided on the surface of the insulating layer of the core material to cover the conductor pattern. The laminated body is heated and pressed. The glass cloth has an opening ratio ranging from 3% to 15%. The thickness t of the first and second resin layers, the ratio a (%) of the area of the conductor pattern to the area of the surface of the insulating layer in the core material, the thickness T of the conductor pattern, and the number n of the one or more prepreg materials satisfy the relationships: T≧100 (μm): and t<(1−a/100)·T<2·n·t.


Find Patent Forward Citations

Loading…