The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2016

Filed:

Aug. 25, 2015
Applicant:

Linear Technology Corporation, Milpitas, CA (US);

Inventor:

Ciaran Brennan, Essex Junction, VT (US);

Assignee:

Linear Technology Corporation, Milpitas, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H04L 12/40 (2006.01); H03K 17/16 (2006.01); H03K 3/012 (2006.01); H03K 17/687 (2006.01); H04L 12/12 (2006.01);
U.S. Cl.
CPC ...
H04L 12/40039 (2013.01); H03K 3/012 (2013.01); H03K 17/164 (2013.01); H03K 17/687 (2013.01); H04L 12/12 (2013.01); H04L 12/40032 (2013.01); H04L 2012/40215 (2013.01);
Abstract

A Controller Area Network (CAN) driver (a transmitter) includes a conventional main driver having an open drain first driver MOSFET, for pulling up a first conductor of a bus in a dominant state, and an open drain second driver MOSFET, for pulling down a second conductor of the bus in the dominant state. Since it is difficult to perfectly match the driver MOSFET characteristics for conducting exactly equal currents during turning on and turning off, significant common mode fluctuations occur, resulting in electromagnetic emissions. Source followers are respectively connected in parallel with the first driver MOSFET and the second driver MOSFET for creating a low common mode loading impedance on the conductors during times when the main driver MOSFETs are turning on and turning off to greatly reduce any common mode fluctuations caused by the main driver MOSFETs.


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