The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Mar. 13, 2014
Applicant:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Inventors:
Wataru Sawada, Tokyo, JP;
Takahiro Miura, Tokyo, JP;
Assignee:
HITACHI KOKUSAI ELECTRIC, INC., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/40 (2015.01); H01P 1/30 (2006.01); H01L 23/04 (2006.01); H01L 23/00 (2006.01); H01L 23/40 (2006.01); H01P 5/08 (2006.01); H04B 3/52 (2006.01); H04B 1/3888 (2015.01); H01L 23/66 (2006.01);
U.S. Cl.
CPC ...
H04B 1/40 (2013.01); H01L 23/04 (2013.01); H01L 23/4006 (2013.01); H01L 23/562 (2013.01); H01P 1/30 (2013.01); H01P 5/08 (2013.01); H04B 1/3888 (2013.01); H04B 3/52 (2013.01); H01L 23/66 (2013.01); H01L 2223/6627 (2013.01); H01L 2223/6683 (2013.01); H01L 2924/1423 (2013.01); H01L 2924/167 (2013.01);
Abstract
A high frequency circuit device that can avoid an occurrence of a stress concentration to a dielectric substrate during a temperature increase caused by a difference in coefficients of linear expansions of a chassis and a metal housing of a high frequency module is provided.