The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2016

Filed:

Sep. 08, 2015
Applicant:

The Arizona Board of Regents on Behalf of the University of Arizona, Tucson, AZ (US);

Inventors:

Jerome V. Moloney, Tucson, AZ (US);

Isak R. Kilen, Tucson, AZ (US);

Stephen W. Koch, Tucson, AZ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/098 (2006.01); H01S 5/34 (2006.01); H01S 5/042 (2006.01); H01S 5/065 (2006.01); H01S 5/187 (2006.01); H01S 3/11 (2006.01); H01S 3/06 (2006.01);
U.S. Cl.
CPC ...
H01S 5/34 (2013.01); H01S 3/0604 (2013.01); H01S 3/1115 (2013.01); H01S 5/042 (2013.01); H01S 5/065 (2013.01); H01S 5/0657 (2013.01); H01S 5/187 (2013.01);
Abstract

A surface-emitting semiconductor laser system contains at least one MQW unit of at least three constituent QWs, separated along the optical axis by a sub-wavelength distance. The MQW unit is located within the axial extent covered, in operation of the laser, by a half-cycle of the standing wave of the field at a wavelength within the gain spectrum of the gain medium; immediately neighboring nodes of the standing wave are on opposite sides of the MQW unit. So-configured MQW unit can be repeated multiple times and/or complemented with individual QWs disposed outside of the half-cycle of the standing wave with which such MQW unit is associated. The semiconductor laser further includes a pump source configured to input energy in the semiconductor gain medium and a mode-locking element to initiate mode-locking.


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