The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2016

Filed:

Mar. 16, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventor:

Masahiko Akiyama, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0022 (2013.01); H01L 51/055 (2013.01); H01L 51/0529 (2013.01); C08G 2261/51 (2013.01); C08G 2261/92 (2013.01); H01L 51/0035 (2013.01); H01L 51/0541 (2013.01);
Abstract

According to one embodiment, there is provided a manufacturing method of an electronic device including a lower electrode, a source electrode and a drain electrode made of a nanoparticulate conductive material on a substrate, an organic semiconductor layer between the source and drain electrodes, and a gate electrode on the organic semiconductor layer via a gate insulating layer. The manufacturing method includes forming a nonphotosensitive resin layer as the gate insulating layer on the organic semiconductor layer and on the lower electrode, forming a photosensitive resin layer as the gate insulating layer on the nonphotosensitive resin layer, and forming a through hole in the photosensitive resin layer on the lower electrode.


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