The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Nov. 10, 2014
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventors:
Jia-Kuen Wang, Hsinchu, TW;
Chien-Fu Shen, Hsinchu, TW;
Hung-Che Chen, Hsinchu, TW;
Chao-Hsing Chen, Hsinchu, TW;
Assignee:
EPISTAR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 33/00 (2010.01); H01L 33/60 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/0095 (2013.01); H01L 33/60 (2013.01); H01L 2933/0016 (2013.01);
Abstract
An optoelectronic device comprises a semiconductor stack, a first metal layer formed above the semiconductor stack, wherein the first metal layer comprises a first major plane and a first boundary with a gradually reduced thickness, and a second metal layer formed above the first metal layer, wherein the second metal layer comprise a second major plane paralleling to the first major plane and a second boundary with a gradually reduced thickness, and the second boundary of the second metal layer exceeds the first boundary of the first metal layer.