The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2016

Filed:

Sep. 18, 2013
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Joachim Hertkorn, Woerth an der Donau, DE;

Jan-Philipp Ahl, Regensburg, DE;

Lorenzo Zini, Regensburg, DE;

Matthias Peter, Regensburg, DE;

Tobias Meyer, Ihrlerstein, DE;

Alexander Frey, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 21/02 (2006.01); H01L 33/02 (2010.01); H01L 33/14 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0075 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); H01L 33/007 (2013.01); H01L 33/025 (2013.01); H01L 33/14 (2013.01); H01L 33/32 (2013.01); H01L 33/0079 (2013.01); H01L 33/22 (2013.01);
Abstract

A method is provided for producing an optoelectronic device, comprising the steps of providing a substrate, applying a nucleation layer on a surface of the substrate, applying and patterning a mask layer on the nucleation layer, growing a nitride semiconductor in a first growth step, wherein webs are laid which form a lateral lattice, wherein the webs have trapezoidal cross-sectional areas in places in the direction of growth, and laterally overgrowing the webs with a nitride semiconductor in a second growth step, to close spaces between the webs.


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