The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Mar. 04, 2016
National Central University, Taoyuan, TW;
Jin-Wei Shi, Taoyuan, TW;
NATIONAL CENTRAL UNIVERSITY, Taoyuan, TW;
Abstract
A novel photodetecting device having field confined by mesas is provided. The device is an avalanche photodiode (APD) of indium aluminum arsenide (InAlAs). The device has epitaxial layers with a multiplication layer at bottom as a cathode. Hence, the strongest electric field is confined inside the bottom of the device to avoid surface breakdown. Double mesa is used to confine the electric field of the multiplication layer. Furthermore, a composite multiplication layer with supper thin thickness and wide bandgap is used to reduce the tunneling dark current. Hence, the thickness of equivalent multiplication layer can be reduced to enhance sensitivity.