The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Jun. 04, 2015
Synaptics Display Devices Gk, Nakano-Ku, Tokyo, JP;
Tomoaki Tanaka, Nakano, JP;
Synaptics Display Devices GK, Tokyo, JP;
Abstract
A junction barrier Schottky diode is formed by shifting second semiconductor regions of a second conductivity type in a staggered shape in a first semiconductor region of a first conductivity type so that pn junction regions are formed at predetermined distances between the second semiconductor regions and the first semiconductor region. A third semiconductor region of the first conductivity type is formed between the second semiconductor regions in order to form a Schottky junction region. An electrode is formed on the second and third semiconductor regions. The second semiconductor regions arranged at equal distances in an X direction are formed in a plurality of columns in a Y direction. An amount of shift between adjacent columns in the X direction is set such that a Y-direct ion distance between the second semiconductor regions in the different columns is larger than an X-direction distance between the second semiconductor regions in each column.