The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
May. 04, 2015
Applicant:
Inotera Memories, Inc., Taoyuan, TW;
Inventor:
Tzung-Han Lee, Taipei, TW;
Assignee:
INOTERA MEMORIES, INC., Taoyuan, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 21/225 (2006.01); H01L 21/266 (2006.01); H01L 27/108 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/2253 (2013.01); H01L 21/266 (2013.01); H01L 21/26586 (2013.01); H01L 21/324 (2013.01); H01L 27/10873 (2013.01); H01L 27/10885 (2013.01); H01L 29/0847 (2013.01); H01L 29/66666 (2013.01); H01L 21/823487 (2013.01);
Abstract
A non-floating vertical transistor includes a substrate and a protuberant structure extending from the substrate. A segregating pillar is inside the protuberant structure. A pair of segregated bit-lines which are segregated by the segregating pillar is disposed in the substrate and in the protuberant structure and adjacent to the bottom of the segregating pillar. A gate oxide layer is attached to the sidewall of the protuberant structure. A word-line is adjacent to the gate oxide layer so that the gate oxide layer is sandwiched between the word-line and a doped deposition layer.