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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9466711 B1

PDFFull Text
Date of Patent:
Oct. 11, 2016

Filed:

Jan. 28, 2009

Semiconductor device

Applicants:

Seiji Momota, Matsumoto, JP;

Hitoshi Abe, Matsumoto, JP;

Takashi Shiigi, Matsumoto, JP;

Takeshi Fujii, Matsumoto, JP;

Koh Yoshikawa, Matsumoto, JP;

Tetsutaro Imagawa, Matsumoto, JP;

Masaki Koyama, Kariya, JP;

Makoto Asai, Kariya, JP;

Inventors:

Seiji Momota, Matsumoto, JP;

Hitoshi Abe, Matsumoto, JP;

Takashi Shiigi, Matsumoto, JP;

Takeshi Fujii, Matsumoto, JP;

Koh Yoshikawa, Matsumoto, JP;

Tetsutaro Imagawa, Matsumoto, JP;

Masaki Koyama, Kariya, JP;

Makoto Asai, Kariya, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;

Attorney:

Westerman, Hattori, Daniels & Adrian, LLP

Primary Examiner:

Matthew W Such

Assistant Examiner:

Scott Stowe

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/96 (2006.01); H01L 29/739 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7815 (2013.01); H01L 29/7395 (2013.01); H01L 29/7397 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/4236 (2013.01);
Abstract

Between a source electrode () of a main device () and a current sensing electrode () of a current detection device (), a resistor for detecting current is connected. Dielectric withstand voltage of gate insulator () is larger than a product of the resistor and maximal current flowing through the current detection device () with reverse bias. A diffusion length of a p-body region () of the main device () is shorter than that of a p-body () of the current detection device (). A curvature radius at an end portion of the p-body region () of the main device () is smaller than that of the p-body () of the current detection device (). As a result, at the inverse bias, electric field at the end portion of the p-body region () of the main device () becomes stronger than that of the p-body region () of the current detection device (). Consequently, avalanche breakdown tends to occur earlier in the main devicethan the current detection device ().

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