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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9466710 B1

PDFFull Text
Date of Patent:
Oct. 11, 2016

Filed:

Nov. 12, 2015

Source and body contact structure for trench-dmos devices using polysilicon

Applicant:

Alpha & Omega Semiconductor, Ltd, Hamilton, BM;

Inventors:

François Hébert, San Mateo, CA (US);

Anup Bhalla, Santa Clara, CA (US);

Assignee:

ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED, Hamilton, BM;

Attorneys:

Joshua D. Isenberg

JDI Patent

Primary Examiner:

Matthew W Such

Assistant Examiner:

Scott Stowe

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/086 (2013.01); H01L 29/41766 (2013.01); H01L 29/42368 (2013.01); H01L 29/66727 (2013.01); H01L 29/66734 (2013.01); H01L 29/0869 (2013.01); H01L 29/456 (2013.01);
Abstract

A semiconductor device includes a gate electrode, a top source region disposed next to the gate electrode, a drain region disposed below the bottom of the gate electrode, a dielectric disposed on top of the gate electrode, and a doped polysilicon spacer disposed on the source region and along a sidewall of the dielectric. Methods for manufacturing such device are also disclosed. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Find Patent Forward Citations

Hébert, François. (2016). Source and body contact structure for trench-dmos devices using polysilicon (U.S. Patent No. 9466710). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9466710

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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